W948D6FB / W948D2FB
256Mb Mobile LPDDR
A subsequent ACTIVE command to another bank can be issued while the first bank is being accessed, which results
in a reduction of total row-access overhead. The minimum time interval between two successive ACTIVE commands
on different banks is defined by t RRD .
The row remains active until a PRECHARGE command (or READ or WRITE command with Auto Precharge) is
issued to the bank.
A PRECHARGE (or READ with Auto Precharge or Write with Auto Precharge) command must be issued before
opening a different row in the same bank.
7.4.2 Bank Activation Command Cycle
CK
CK
Command
ACT
NOP
ACT
NOP
NOP
RD/WR
NOP
A0-An
BA0,BA1
Row
BA x
t RRD
Row
BA y
t RCD
Col
BA y
= Don't Care
7.5. Read
The READ command is used to initiate a burst read access to an active row, with a burst length as set in the Mode
Register. BA0 and BA1 select the bank, and the address inputs select the starting column location. The value of A10
determines whether or not Auto Pre-charge is used. If Auto Pre-charge is selected, the row being accessed will be
pre-charged at the end of the read burst; if Auto Pre-charge is not selected, the row will remain open for subsequent
accesses.
Publication Release Date : Oct, 15, 2012
- 27 -
Revision : A01-004
相关PDF资料
W949D2CBJX5E IC LPDDR SDRAM 512MBIT 90VFBGA
W971GG6JB25I IC DDR2 SDRAM 1GBIT 84WBGA
W971GG8JB-25 IC DDR2 SDRAM 1GBIT 60WBGA
W9725G6IB-25 IC DDR2-800 SDRAM 256MB 84-WBGA
W9725G6JB25I IC DDR2 SDRAM 256MBIT 84WBGA
W9725G6KB-25I IC DDR2 SDRAM 256MBIT 84WBGA
W972GG6JB-3I IC DDR2 SDRAM 2GBITS 84WBGA
W9751G6IB-25 IC DDR2-800 SDRAM 512MB 84-WBGA
相关代理商/技术参数
W948D2FBJX5ETR 制造商:Winbond Electronics Corp 功能描述:256M MDDR, X32, 200MHZ
W948D2FBJX5I 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA 制造商:Winbond Electronics Corp 功能描述:IC MEMORY
W948D2FBJX5I TR 制造商:Winbond Electronics Corp 功能描述:256M MDDR, X32, 200MHZ, INDUST
W948D2FBJX6E 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA 制造商:Winbond Electronics 功能描述:LOW POWER DRAM 制造商:Winbond Electronics Corp 功能描述:IC MEMORY
W948D2FBJX6ETR 制造商:Winbond Electronics Corp 功能描述:256M MDDR, X32, 166MHZ, 65NM
W948D2FBJX6G 制造商:WINBOND 制造商全称:Winbond 功能描述:256Mb Mobile LPDDR
W948D6FB 制造商:WINBOND 制造商全称:Winbond 功能描述:256Mb Mobile LPDDR
W948D6FBHX5E 功能描述:IC LPDDR SDRAM 256MBIT 60VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:4G(256M x 16) 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP I 包装:Digi-Reel® 其它名称:557-1461-6